SUM90N08-6m2P
Vishay Siliconix
TYPICAL CHARACTERISTICS
160
25 °C, unless otherwise noted
1000
Limited b y r DS(on) *
128
100
100 μ s
96
Package Limited
64
32
0
10
1
0.1
T C = 25 °C
Single P u lse
1 ms
10 ms
100 ms
DC
0
25
50
75
100
125
150
175
0.1
1
10
100
T C - Case Temperat u re (°C)
Maximum Drain Current vs. Case Temperature (SUM)
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P u lse
0.01
* V GS
V DS - Drain-to-So u rce V oltage ( V )
minim u m V GS at w hich r DS(on) is specified
Safe Operating Area
10 -4
10 -3
10 -2
10 -1
1
S qu are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?69552.
Document Number: 69552
S-72505-Rev. A, 03-Dec-07
www.vishay.com
5
相关PDF资料
SUM90N08-7M6P-E3 MOSFET N-CH D-S 75V D2PAK
SUM90N10-8M2P-E3 MOSFET N-CH D-S 100V D2PAK
SUP18N15-95-E3 MOSFET N-CH 150V 18A TO220-3
SUP28N15-52-E3 MOSFET N-CH D-S 150V TO220AB
SUP40P10-43-GE3 MOSFET P-CH 100V 36A TO220AB
SUP45N03-13L-E3 MOSFET N-CH D-S 30V TO220AB
SUP60N02-4M5P-E3 MOSFET N-CH D-S 20V TO220AB
SUP60N10-16L-E3 MOSFET N-CH D-S 100V TO220AB
相关代理商/技术参数
SUM90N08-7M6P 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:SUM90N08-7m6P
SUM90N08-7M6P-E3 功能描述:MOSFET 75V 90A 150W 7.6mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUM90N10-8M2P 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 100-V (D-S) MOSFET
SUM90N10-8M2P-E3 功能描述:MOSFET 100V 90A 300W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUM90P10-19-E3 功能描述:MOSFET 100V 90A 375W 19mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUM90P10-19L 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 100-V (D-S) MOSFET
SUM90P10-19L_08 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 100-V (D-S) MOSFET
SUM90P10-19L-E3 功能描述:MOSFET 100V 90A 375W 19mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube